B.J Skromme: search on Z-Library

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1

Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes

Atul Mahajan, B.J. Skromme

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 452 KB

english, 2005

2

Toward a Contingency Model of Strategic Risk Taking

Inga Skromme Baird and Howard Thomas

Journal:

The Academy of Management Review

Year:

1985

Language:

english

File:

PDF, 390 KB

english, 1985

3

Matching Individual Career Plans and Organizational Career Management

Cherlyn Skromme Granrose and James D. Portwood

Journal:

The Academy of Management Journal

Year:

1987

Language:

english

File:

PDF, 667 KB

english, 1987

4

Role stressors, social support, and well-being among two-career couples

Saroj Parasuraman, Jeffrey H. Greenhaus, Cherlyn Skromme Granrose

Journal:

Journal of Organizational Behavior

Year:

1992

Language:

english

File:

PDF, 1.27 MB

english, 1992

5

[IEEE 2013 IEEE Frontiers in Education Conference (FIE) - Oklahoma City, OK, USA (2013.10.23-2013.10.26)] 2013 IEEE Frontiers in Education Conference (FIE) - Computer-aided instruction for introductory linear circuit analysis

Skromme, B. J., Rayes, P. J., Whitlatch, C. D., Wang, Q., Barrus, A., Quick, J. M., Atkinson, R. K., Frank, T. S.

Year:

2013

Language:

english

File:

PDF, 741 KB

english, 2013

6

Sources of Motivation to Choose Employee Ownership as an Alternative to Job Loss

Arthur Hochner and Cherlyn Skromme Granrose

Journal:

The Academy of Management Journal

Year:

1985

Language:

english

File:

PDF, 406 KB

english, 1985

7

Impact ionization of excitons and shallow donors in InP

Skromme, B. J., Stillman, G. E.

Journal:

Physical Review B

Year:

1983

Language:

english

File:

PDF, 331 KB

english, 1983

8

Effects of thermal strain on the optical properties of heteroepitaxial ZnTe

Zhang, Y., Skromme, B. J., Turco-Sandroff, F. S.

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 861 KB

english, 1992

9

Excited-state-donor—to—acceptor transitions in the photoluminescence spectrum of GaAs and InP

Skromme, B. J., Stillman, G. E.

Journal:

Physical Review B

Year:

1984

Language:

english

File:

PDF, 1.13 MB

english, 1984

10

Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular-beam epitaxy

Zhang, Y., Skromme, B. J., Shibli, S. M., Tamargo, M. C.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 371 KB

english, 1993

11

Band-to-acceptor transitions in the low-temperature-luminescence spectrum of Li-doped p -type ZnSe grown by molecular-beam epitaxy

Zhang, Y., Skromme, B. J., Cheng, H.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 721 KB

english, 1993

12

Do psychological contracts include boundaryless or protean careers?

Skromme Granrose, Cherlyn, Baccili, Patricia A.

Journal:

Career Development International

Year:

2006

Language:

english

File:

PDF, 255 KB

english, 2006

13

Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition

B.J. Skromme, W. Liu, K.F. Jensen, K.P. Giapis

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 605 KB

english, 1994

14

Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: characterization by electron microscopy and optical methods

S.-C.Y. Tsen, David J. Smith, J.W. Hutchins, B.J. Skromme, Y.P. Chen, S. Sivananthan

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 414 KB

english, 1996

15

Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

J.W. Hutchins, B. Parameshwaran, B.J. Skromme, David J. Smith, S. Sivananthan

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

16

MnSZnSe on GaAs grown by molecular beam epitaxy

S. Sivananthan, L. Wang, R. Sporken, J. Chen, B.J. Skromme, David J. Smith

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 394 KB

english, 1996

17

Optical and magneto-optical characterization of heteroepitaxial gallium nitride

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 259 KB

english, 1997

18

Surface recombination and sulfide passivation of GaN

G. L. Martinez, M. R. Curiel, B. J. Skromme, R. J. Molnar

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 239 KB

english, 2000

19

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

B. J. Skromme, E. Luckowski, K. Moore, M. Bhatnagar, C. E. Weitzel, T. Gehoski, D. Ganser

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 211 KB

english, 2000

20

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

M.C. Tamargo, R.E. Nahory, B.J. Skromme, S.M. Shibli, A.L. Weaver, R.J. Martin, H.H. Farrell

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 568 KB

english, 1991

21

Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

B.J. Skromme, R. Bhat, M.A. Koza

Journal:

Solid State Communications

Year:

1988

Language:

english

File:

PDF, 378 KB

english, 1988

22

Optical characterization of bulk GaN grown by a Na–Ga melt technique

B.J Skromme, K Palle, C.D Poweleit, H Yamane, M Aoki, F.J DiSalvo

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 249 KB

english, 2002

23

Returning to Work Following Childbirth: The Relationship Between Intentions and Behavior

Cherlyn Skromme Granrose, Eileen Kaplan

Journal:

Journal of Applied Social Psychology

Year:

1994

Language:

english

File:

PDF, 1.12 MB

english, 1994

24

Strain determination in heteroepitaxial GaN

Skromme, B. J., Zhao, H., Wang, D., Kong, H. S., Leonard, M. T., Bulman, G. E., Molnar, R. J.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 294 KB

english, 1997

25

Systematic investigation of shallow acceptor levels in ZnSe

Y. Zhang, W. Liu, B.J. Skromme, H. Cheng, S.M. Shibli, M.C. Tamargo

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 594 KB

english, 1994

26

Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer

Chen, Hui, Raghothamachar, Balaji, Vetter, William, Dudley, Michael, Wang, Y., Skromme, B. J.

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 1.26 MB

english, 2006

27

Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

B. J. Skromme, T. S. Low, T. J. Roth, G. E. Stillman, J. K. Kennedy, J. K. Abrokwah

Journal:

Journal of Electronic Materials

Year:

1983

Language:

english

File:

PDF, 1.02 MB

english, 1983

28

Neutron transmutation doping of high purity GaAs

T. S. Low, M. H. Kim, B. Lee, B. J. Skromme, T. R. Lepkowski, G. E. Stillman

Journal:

Journal of Electronic Materials

Year:

1985

Language:

english

File:

PDF, 1.46 MB

english, 1985

29

Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

M. H. Kim, S. S. Bose, B. J. Skromme, B. Lee, G. E. Stillman

Journal:

Journal of Electronic Materials

Year:

1991

Language:

english

File:

PDF, 982 KB

english, 1991

30

Photoluminescence identification of the C and Be acceptor levels in InP

B. J. Skromme, G. E. Stillman, J. D. Oberstar, S. S. Chan

Journal:

Journal of Electronic Materials

Year:

1984

Language:

english

File:

PDF, 838 KB

english, 1984

31

An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium

K. L. Hess, P. D. Dapkus, H. M. Manasevit, T. S. Low, B. J. Skromme, G. E. Stillman

Journal:

Journal of Electronic Materials

Year:

1982

Language:

english

File:

PDF, 856 KB

english, 1982

32

New shallow acceptor levels in GaAs

B. J. Skromme, S. S. Bose, G. E. Stillman

Journal:

Journal of Electronic Materials

Year:

1986

Language:

english

File:

PDF, 391 KB

english, 1986

33

High purity GaAs grown by the hydride vpe process

J. K. Abrokwah, T. N. Peck, R. A. Walterson, G. E. Stillman, T. S. Low, B. Skromme

Journal:

Journal of Electronic Materials

Year:

1983

Language:

english

File:

PDF, 646 KB

english, 1983

34

Ion beam mixing in ZnSeCdZnSe strained layer structures

R. Morton, F. Deng, S.S. Lau, S. Xin, J.K. Furdyna, J.W. Hutchins, B.J. Skromme, J.W. Mayer

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1996

Language:

english

File:

PDF, 456 KB

english, 1996

35

IVA-4 dramatic enhancement in the gain of AlGaAs/GaAs heterostructure bipolar transistors by surface passivation

Nottenburg, R.N., Sandroff, C.J., Skromme, B.J., Bischoff, J.C., Bhat, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 180 KB

english, 1987

36

Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers

Skromme, B.J., Sasikumar, A., Green, B.M., Hartin, O.L., Weitzel, C.E., Miller, M.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 459 KB

english, 2010

37

A Fishbein-Ajzen model of intention to work following childbirth

Cherlyn Skromme Granrose

Journal:

Journal of Vocational Behavior

Year:

1984

Language:

english

File:

PDF, 890 KB

english, 1984

38

Sources of work-family conflict among two-career couples

Jeffrey H Greenhaus, Saroj Parasuraman, Cherlyn Skromme Granrose, Samuel Rabinowitz, Nicholas J Beutell

Journal:

Journal of Vocational Behavior

Year:

1989

Language:

english

File:

PDF, 1.35 MB

english, 1989

39

Identification of donors in GaAs by resonantly excited high-field magnetospectroscopy

Skromme, B.J., Bhat, R., Cox, H.M., Colas, E.

Journal:

IEEE Journal of Quantum Electronics

Year:

1989

Language:

english

File:

PDF, 1.27 MB

english, 1989

40

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., Sutter, E., Zhu, Y., Skromme, B. J.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 1.30 MB

english, 2005

41

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

Skromme, B. J., Jayapalan, J., Vaudo, R. P., Phanse, V. M.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 390 KB

english, 1999

42

Luminescence as a Diagnostic of Wide-Gap II-VI Compound Semiconductor Materials

Journal:

Annual Review of Materials Science

Year:

1995

Language:

english

File:

PDF, 1.16 MB

english, 1995

43

Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

J. Bai, M. Dudley, L. Chen, B. J. Skromme, B. Wagner, R. F. Davis, U. Chowdhury, R. D. Dupuis

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 277 KB

english, 2005

44

3.P.189 Vitamin A effects on the endothelium and atheroma plaques in patients with ischemic heart disease

Ruesga, E., Skromme, D., Fortoul, T., Antuna, T., Cardoza, H., Juan, L., Magaña, J., Jauregui, R.L., Necoechea, J., Palomo, J., Estrada, J.

Journal:

Atherosclerosis

Year:

1997

Language:

english

File:

PDF, 153 KB

english, 1997

45

Handbook of Career Studiesby Hugh P. Gunz; Maury A. Peiperl

Review by: Cherlyn Skromme Granrose

Journal:

The Academy of Management Perspectives (AMP)

Year:

2007

Language:

english

File:

PDF, 386 KB

english, 2007

46

Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator

Hummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y., Skromme, B. J., Lee, W. I.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 684 KB

english, 1992

47

InGaAs/InP superlattice mixing induced by Zn or Si diffusion

Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 662 KB

english, 1988

48

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Shibli, S. M., Tamargo, M. C., De Miguel, J. L., Skromme, B. J., Nahory, R. E., Farrell, H. H.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 905 KB

english, 1989

49

Band-edge exciton states in AlN single crystals and epitaxial layers

Chen, L., Skromme, B. J., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y., Jiang, H.-X.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 314 KB

english, 2004

50

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Bhat, R., Koza, M. A., Skromme, B. J.

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 563 KB

english, 1987